Logic/ Mixed-Mode/ RF technologies are the most commonly used foundry solutions for a vast number of applications, such as DTV, Bluetooth, Wi-Fi, ISP, RF transceiver etc. USCXM has built a wide range of technologies across different generations for data processing, mixed mode and RF ICs that also serve as a strong foundation for establishing specialty technology platforms.

From a foundry perspective, logic/ Mixed-Mode/ RF technologies account for more than 50% of the foundry addressable market. USCXM has developed state-of-the-art low power and RF technologies on 300mm manufacturing technologies to meet the needs of data processing, connectivity, communications, scanning and sensing applications in the AIoT era.

22nm

ultra-low power (ULP) and ultra-low leakage (ULL) options

USCXM's 22nm process, an optimized platform from based on USCXM's 28nm technology for performance enhancement, is currently in volume production. The 22nm superset technology includes both ultra-low power (ULP) and ultra-low leakage (ULL) options on the same platform. It has the same mask count and compatible design rules with the company's 28nm technology, offering better performance with no added complexity. Chip designers can confidently use USCXM's 22nm design guidelines to gain area benefits and additional performance.

The 22nm process platform has fundamental IP support for various semiconductor applications in the market, including consumer electronics such as set-top boxes, digital TVs, monitors, and power or leakage-sensitive IoT chips (with Bluetooth or Wi-Fi) that are more Ideal for wearables requiring extended battery life.

22nm process, derived from the company's 28nm technology for performance enhancement, has up to a 10% area gain compared with the 28nm HKMG process and better power/performance ratio with enhanced RF performance. Iddq can be reduced by up to 30% @ fixed speed or its speed enhanced by up to 10% @ fixed iddq in certain conditions. Optional devices are added to offer a more flexible analog design environment for system-on-chip (SoC) designs.

The 22nm superset technology includes both ULP and ULL options on the same platform. This technology can support voltages from 1.0V to 0.6V. Customers can enjoy the advantages of both technologies within one platform for SoC designs.

28nm

Value and Performance Driven 28nm Technology

Our 28nm process technology uses new stress techniques (SMT, t-CESL, c-CESL) and embedded SiGe to enhance electron mobility performance, and is ideal for applications that require high performance and low power consumption. We have years of experience in high volume production for numerous customer products on both USCXM's 28 HLP SiON and 28 HPC / HPC+ High-K-Metal Gate processes and have ample capacity to meet the high customer demand for this popular mainstream process technology.

USCXM's 28nm High Performance Low Power (28HLP) process provides a natural migration path from 40nm with easy adoption, fast-time-to-market, and a very favorable performance / cost ratio. USCXM's SiON solution delivers vastly improved performance and power consumption for customers demanding more speed for their particular application, with a 10% speed increase over other 28nm SiON industry offerings.

USCXM's 28nm High-k/metal gate stack (HPC / HPC+) supports broad device options for increased flexibility and performance requirements, targeting a wide range of products such as application processor, cellular baseband, WLAN, Tablet, FPGA and Networking ICs. The High-k/ metal gate stack and abundant options for device voltages, memory bit-cells and underdrive/ overdrive capabilities help SoC designers realize unmatched performance and battery life.

28nm Technology for Broad Applications

Our rich 28nm technology platform and multiple process approach satisfies the rigorous requirements of all major market applications.

40nm

USCXM is a leading global foundry provider of 40nm technology, having delivered customer products on this advanced process node since 2017. USCXM's 40nm Low Power (40LP) platform can meet various design application needs, starting with our flexible 40nm technology design platform. Customers are then able to choose the process device options that are optimized for their specific application, such as high performance and low power transistors. USCXM 40nm Ultra Low Power (40uLP) is evolved from the 40nm low power technology (40LP) to generate a lower operation voltage platform in order to meet lower power consumption and lower leakage application requirement. USCXM's ultra-low power (40uLP) process consists of interface IP, IP subsystems, logic libraries, embedded memories and analog IP, which optimized two clusters of process/voltage/temperatures (PVTs), giving designers the ability to increase performance over conventional total corners.

USCXM's 40nm technology can fulfill a wide variety of applications that require high performance and low active power with low-leakage applications, such as, Bluetooth applications, Internet of Things, Low power WiFi, GPS, FM receivers, Emerging wireless RF applications such as Lora, Zigbee and SigFox.